? semiconductor components industries, llc, 2005 november, 2005 ? rev. 2 publication order number: EMX2DXV6T5/d 1 EMX2DXV6T5 preferred devices dual npn general purpose amplifier transistor this npn transistor is designed for general purpose amplifier applications. this device is housed in the sot-563 package which is designed for low power surface mount applications, where board space is at a premium. features ? reduces board space ? high h fe , 210 ? 460 (typical) ? low v ce(sat) , < 0.5 v ? these are pb ? free devices maximum ratings (t a = 25 c) rating symbol value unit collector-base voltage v (br)cbo 60 vdc collector-emitter voltage v (br)ceo 50 vdc emitter-base voltage v (br)ebo 7.0 vdc collector current ? continuous i c 100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 357 (note 1) 2.9 (note 1) mw mw/ c thermal resistance, junction-to-ambient r ja 350 (note 1) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 500 (note 1) 4.0 (note 1) mw mw/ c thermal resistance, junction-to-ambient r ja 250 (note 1) c/w junction and storage temperature range t j , t stg ? 55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. fr ? 4 @ minimum pad ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. marking diagram q 2 http://onsemi.com sot ? 563 case 463a style 2 1 6 1 device package shipping ? ordering information EMX2DXV6T5 sot ? 563 (pb ? free) 8000/tape & reel q 1 3r m dual npn general purpose amplifier transistors surface mount (3) (2) (4) (5) (6) (1) EMX2DXV6T5g sot ? 563 (pb ? free) 8000/tape & reel 3r = specific device code m = month code = pb ? free package (note: microdot may be in either location)
EMX2DXV6T5 http://onsemi.com 2 electrical characteristics (t a = 25 c) characteristic symbol min typ max unit collector-base breakdown voltage (i c = 50 adc, i e = 0) v (br)cbo 60 ? ? vdc collector-emitter breakdown voltage (i c = 1.0 madc, i b = 0) v (br)ceo 50 ? ? vdc emitter-base breakdown voltage (i e = 50 adc, i e = 0) v (br)ebo 7.0 ? ? vdc collector-base cutoff current (v cb = 60 vdc, i e = 0) i cbo ? ? 0.5 a emitter-base cutoff current (v eb = 7.0 vdc, i b = 0) i ebo ? ? 0.5 a collector-emitter saturation voltage (note 2) (i c = 50 madc, i b = 5.0 madc) v ce(sat) ? ? 0.4 vdc dc current gain (note 3) (v ce = 6.0 vdc, i c = 1.0 madc) h fe 120 ? 560 ? transition frequency (v ce = 12 vdc, i c = 2.0 madc, f = 30 mhz) f t ? 180 ? mhz output capacitance (v cb = 12 vdc, i c = 0 adc, f = 1 mhz) c ob ? 2.0 ? pf 2. device mounted on a fr-4 glass epoxy printed circuit board using the minimum recommended footprint. 3. pulse test: pulse width 300 s, d.c. 2%.
EMX2DXV6T5 http://onsemi.com 3 typical electrical characteristics figure 1. i c ? v ce v ce , collector voltage (v) figure 2. dc current gain i c , collector current (ma) figure 3. collector saturation region i b , base current (ma) figure 4. on voltage i c , collector current (ma) i c , collector current (ma) 60 0 50 40 30 20 10 0 24 68 t a = 25 c 160 a 140 a 120 a 100 a 80 a 60 a 40 a i b = 20 a dc current gain 1000 0.1 100 10 1 10 100 t a = 25 c t a = ? 25 c t a = 75 c v ce = 10 v v ce , collector-emitter voltage (v) 2 0.01 1.5 1 0.5 0 0.1 1 10 100 t a = 25 c collector voltage (mv) 900 0.2 800 700 600 500 400 300 200 100 0.5 1 5 10 20 40 60 80 100 150 200 t a = 25 c v ce = 5 v 0 figure 5. capacitance v cb (v) figure 6. capacitance v eb (v) 20 0 18 16 14 12 10 1234 7 0 c ib , input capacitance (pf) 6 5 4 3 2 1 10 20 30 40 c ob , capacitance (pf)
EMX2DXV6T5 http://onsemi.com 4 package dimensions sot ? 563, 6 lead case 463a ? 01 issue f h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches e m 0.08 (0.003) x b 6 5 pl a c ? x ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e 0.08 0.12 0.18 0.003 0.005 0.007 style 2: pin 1. emitter 1 2. emitter2 3. base 2 4. collector 2 5. base 1 6. collector 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 EMX2DXV6T5/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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